US1M-M3/61T vs 5.0SMCJ250A_R1_00001 feature comparison

US1M-M3/61T Vishay Semiconductors

Buy Now Datasheet

5.0SMCJ250A_R1_00001 PanJit Semiconductor

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS PAN JIT INTERNATIONAL INC
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.50
Samacsys Manufacturer Vishay PANJIT
Additional Feature FREE WHEELING DIODE
Application EFFICIENCY
Breakdown Voltage-Min 1000 V 277 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 1.7 V
JEDEC-95 Code DO-214AC DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A
Number of Elements 1 1
Number of Phases 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Rep Pk Reverse Voltage-Max 1000 V 250 V
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 0.075 µs
Reverse Test Voltage 1000 V
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Breakdown Voltage-Max 306 V
Non-rep Peak Rev Power Dis-Max 5000 W
Polarity UNIDIRECTIONAL
Reference Standard IEC-61000-4-2
Technology AVALANCHE

Compare US1M-M3/61T with alternatives

Compare 5.0SMCJ250A_R1_00001 with alternatives