US1J vs TBYV26C feature comparison

US1J Sangdest Microelectronics (Nanjing) Co Ltd

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TBYV26C Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description SMA, 2 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Additional Feature LOW POWER LOSS
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-C2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Rep Pk Reverse Voltage-Max 600 V 600 V
Reverse Recovery Time-Max 0.075 µs 0.03 µs
Surface Mount YES NO
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 36 2
Forward Voltage-Max (VF) 1.3 V
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A

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