US1G-M3/61T vs S1GHE3G feature comparison

US1G-M3/61T Vishay Semiconductors

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S1GHE3G Taiwan Semiconductor

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2 SMA, 2 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature FREE WHEELING DIODE
Application EFFICIENCY GENERAL PURPOSE
Breakdown Voltage-Min 400 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 30 A 40 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 0.05 µs 1.5 µs
Reverse Test Voltage 400 V
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 1
Rohs Code Yes
Samacsys Manufacturer Taiwan Semiconductor
Reference Standard AEC-Q101

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