US1B
vs
ES1BFSHM3G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Part Package Code
SMA
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
0.95 V
JESD-30 Code
R-PDSO-C2
R-PDSO-F2
Non-rep Pk Forward Current-Max
30 A
30 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
1 A
1 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Recovery Time-Max
0.05 µs
0.035 µs
Surface Mount
YES
YES
Terminal Form
C BEND
FLAT
Terminal Position
DUAL
DUAL
Base Number Matches
33
1
HTS Code
8541.10.00.80
Date Of Intro
2020-06-05
Additional Feature
FREE WHEELING DIODE, LOW POWER LOSS, SNUBBER DIODE
Application
EFFICIENCY
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Min
-55 °C
Reference Standard
AEC-Q101
Reverse Current-Max
1 µA
Terminal Finish
MATTE TIN
Compare US1B with alternatives
Compare ES1BFSHM3G with alternatives