US1AL vs GS1AF1 feature comparison

US1AL Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

GS1AF1 Yangzhou Yangjie Electronics Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD YANGZHOU YANGJIE ELECTRONICS CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-C2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Recovery Time-Max 0.05 µs
Surface Mount YES YES
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 1
Package Description R-PDSO-C2
Additional Feature FREE WHEELING DIODE
JEDEC-95 Code DO-214AC
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish TIN

Compare US1AL with alternatives

Compare GS1AF1 with alternatives