US1006FL-R2-10001 vs 3.0SMCJ58CA_R1_10001 feature comparison

US1006FL-R2-10001 PanJit Semiconductor

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3.0SMCJ58CA_R1_10001 PanJit Semiconductor

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC PAN JIT INTERNATIONAL INC
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.50
Application FAST RECOVERY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 1.7 V
JESD-30 Code R-PDSO-F2 R-PDSO-C2
Non-rep Pk Forward Current-Max 30 A
Number of Elements 1 1
Number of Phases 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Rep Pk Reverse Voltage-Max 600 V 58 V
Reverse Current-Max 1 µA
Reverse Recovery Time-Max 0.1 µs
Reverse Test Voltage 600 V
Surface Mount YES YES
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Package Description R-PDSO-C2
Breakdown Voltage-Max 74.1 V
Breakdown Voltage-Min 64.4 V
Breakdown Voltage-Nom 69.25 V
Clamping Voltage-Max 94 V
JEDEC-95 Code DO-214AB
Non-rep Peak Rev Power Dis-Max 3000 W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL
Reference Standard UL RECOGNIZED
Technology AVALANCHE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare US1006FL-R2-10001 with alternatives

Compare 3.0SMCJ58CA_R1_10001 with alternatives