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UPD421000C-10L vs MSM511000A-10RS feature comparison

UPD421000C-10L Renesas Electronics Corporation

Buy Now Datasheet

MSM511000A-10RS LAPIS Semiconductor Co Ltd

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP LAPIS SEMICONDUCTOR CO LTD
Part Package Code DIP
Package Description DIP, DIP18,.3 DIP, DIP18,.3
Pin Count 18
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Time-Max 100 ns 100 ns
I/O Type SEPARATE SEPARATE
JESD-30 Code R-PDIP-T18 R-PDIP-T18
JESD-609 Code e0 e0
Memory Density 1048576 bit 1048576 bit
Memory IC Type FAST PAGE DRAM FAST PAGE DRAM
Memory Width 1 1
Number of Terminals 18 18
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 1MX1 1MX1
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP18,.3 DIP18,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Refresh Cycles 512 512
Standby Current-Max 0.0002 A 0.001 A
Supply Current-Max 0.06 mA 0.065 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 2 2
Memory » DRAMs
Memory » DRAMs

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