UPD421000C-10
vs
MDM11000TMB-10
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
MOSAIC SEMICONDUCTOR INC
|
| Package Description |
DIP-18
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| Access Time-Max |
100 ns
|
100 ns
|
| I/O Type |
SEPARATE
|
|
| JESD-30 Code |
R-PDIP-T18
|
R-CDIP-T18
|
| JESD-609 Code |
e0
|
|
| Memory Density |
1048576 bit
|
1048576 bit
|
| Memory IC Type |
FAST PAGE DRAM
|
FAST PAGE DRAM
|
| Memory Width |
1
|
1
|
| Number of Terminals |
18
|
18
|
| Number of Words |
1048576 words
|
1048576 words
|
| Number of Words Code |
1000000
|
1000000
|
| Operating Temperature-Max |
70 °C
|
125 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Organization |
1MX1
|
1MX1
|
| Output Characteristics |
3-STATE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Code |
DIP
|
|
| Package Equivalence Code |
DIP18,.3
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Refresh Cycles |
512
|
512
|
| Standby Current-Max |
0.001 A
|
|
| Supply Current-Max |
0.06 mA
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
MILITARY
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
1
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8542.32.00.02
|
| Access Mode |
|
FAST PAGE
|
| Additional Feature |
|
RAS/CBR/HIDDEN REFRESH
|
| Number of Functions |
|
1
|
| Number of Ports |
|
1
|
| Operating Mode |
|
ASYNCHRONOUS
|
| Supply Voltage-Max (Vsup) |
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
|
4.5 V
|
|
|
|
Compare UPD421000C-10 with alternatives
Compare MDM11000TMB-10 with alternatives