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UPA862TD-T3FB vs UPA862TS-FB-A feature comparison

UPA862TD-T3FB Renesas Electronics Corporation

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UPA862TS-FB-A NEC Compound Semiconductor Devices Ltd

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer RENESAS ELECTRONICS CORP NEC COMPOUND SEMICONDUCTOR DEVICES LTD
Package Description SMALL OUTLINE, R-PDSO-F6 SUPER LEADLESS MINIMOLD PACKAGE-6
Pin Count 6
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.03 A 0.03 A
Collector-Base Capacitance-Max 0.7 pF 0.7 pF
Collector-Emitter Voltage-Max 6 V 6 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Highest Frequency Band L BAND L BAND
JESD-30 Code R-PDSO-F6 R-PDSO-F6
JESD-609 Code e0 e6
Number of Elements 2 2
Number of Terminals 6 6
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD TIN BISMUTH
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 12000 MHz 12000 MHz
Base Number Matches 3 2
Rohs Code Yes
Moisture Sensitivity Level 1
Transistors » RF Small Signal Bipolar Transistors
Transistors » RF Small Signal Bipolar Transistors

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