UPA812T-A vs UPA812T-T1-A feature comparison

UPA812T-A NEC Compound Semiconductor Devices Ltd

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UPA812T-T1-A Renesas Electronics Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NEC COMPOUND SEMICONDUCTOR DEVICES LTD RENESAS ELECTRONICS CORP
Package Description PLASTIC, SO-6
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.065 A 0.065 A
Collector-Base Capacitance-Max 0.9 pF
Collector-Emitter Voltage-Max 10 V
Configuration SEPARATE, 2 ELEMENTS
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G6
JESD-609 Code e6
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish TIN BISMUTH
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 7000 MHz 4500 MHz
Base Number Matches 3 3
Pbfree Code Yes
Pin Count 6
DC Current Gain-Min (hFE) 70
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.2 W