UPA810T-T1
vs
NE68833-T1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
CALIFORNIA EASTERN LABORATORIES
Package Description
PLASTIC, SO-6
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOW NOISE
LOW NOISE
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Base Capacitance-Max
1.5 pF
0.85 pF
Collector-Emitter Voltage-Max
12 V
6 V
Configuration
SEPARATE, 2 ELEMENTS
SINGLE
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
C BAND
JESD-30 Code
R-PDSO-G6
R-PDSO-G3
JESD-609 Code
e0
Number of Elements
2
1
Number of Terminals
6
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
4500 MHz
8500 MHz
Base Number Matches
3
2
DC Current Gain-Min (hFE)
80
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
0.2 W
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