UNR1112
vs
BC856R
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
PANASONIC CORP
|
NXP SEMICONDUCTORS
|
| Package Description |
IN-LINE, R-PSIP-T3
|
SMALL OUTLINE, R-PDSO-G3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 1
|
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
65 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE
|
| DC Current Gain-Min (hFE) |
60
|
125
|
| JESD-30 Code |
R-PSIP-T3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
0.4 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
GULL WING
|
| Terminal Position |
SINGLE
|
DUAL
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
80 MHz
|
150 MHz
|
| Base Number Matches |
1
|
3
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| JESD-609 Code |
|
e3
|
| Operating Temperature-Max |
|
150 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Terminal Finish |
|
Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| VCEsat-Max |
|
0.65 V
|
|
|
|
Compare UNR1112 with alternatives
Compare BC856R with alternatives