UN211N
vs
PDTA144TE,115
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
PANASONIC CORP
NXP SEMICONDUCTORS
Part Package Code
SC-59
SC-75
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Category CO2 Kg
8.8
EU RoHS Version
RoHS 2 (2011/65/EU)
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 10
BUILT-IN BIAS RESISTOR
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
80
100
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
PNP
PNP
Power Dissipation-Max (Abs)
0.2 W
0.15 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
10
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
80 MHz
Base Number Matches
5
1
Manufacturer Package Code
SOT416
Factory Lead Time
4 Weeks
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Terminal Finish
TIN
Compare UN211N with alternatives
Compare PDTA144TE,115 with alternatives