UM4301C
vs
UM4301BE3
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROSEMI CORP
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.60
|
8541.10.00.80
|
Additional Feature |
LOW DISTORTION
|
LOW DISTORTION
|
Application |
ATTENUATOR
|
ATTENUATOR
|
Breakdown Voltage-Min |
100 V
|
|
Case Connection |
CATHODE
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Capacitance-Max |
2.2 pF
|
2.2 pF
|
Diode Capacitance-Nom |
2.2 pF
|
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Forward Resistance-Max |
1.5 Ω
|
1.5 Ω
|
Diode Res Test Current |
100 mA
|
|
Diode Res Test Frequency |
150 MHz
|
|
Diode Type |
PIN DIODE
|
PIN DIODE
|
Frequency Band |
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
JESD-30 Code |
O-XUPM-N1
|
O-XALF-W2
|
JESD-609 Code |
e0
|
|
Minority Carrier Lifetime-Nom |
6 µs
|
6 µs
|
Number of Elements |
1
|
1
|
Number of Terminals |
1
|
2
|
Operating Temperature-Max |
175 °C
|
|
Operating Temperature-Min |
-65 °C
|
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
POST/STUD MOUNT
|
LONG FORM
|
Power Dissipation-Max |
20 W
|
2.5 W
|
Qualification Status |
Not Qualified
|
|
Reverse Test Voltage |
100 V
|
|
Surface Mount |
NO
|
NO
|
Technology |
POSITIVE-INTRINSIC-NEGATIVE
|
POSITIVE-INTRINSIC-NEGATIVE
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
NO LEAD
|
WIRE
|
Terminal Position |
UPPER
|
AXIAL
|
Base Number Matches |
2
|
2
|
|
|
|
Compare UM4301C with alternatives
Compare UM4301BE3 with alternatives