ULN2801A
vs
ULN2804AP
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
STMICROELECTRONICS
|
TOSHIBA CORP
|
| Part Package Code |
DIP
|
DIP
|
| Package Description |
DIP-18
|
IN-LINE, R-PDIP-T18
|
| Pin Count |
18
|
18
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
16 Weeks, 3 Days
|
|
| Samacsys Manufacturer |
STMicroelectronics
|
Toshiba
|
| Collector Current-Max (IC) |
0.5 A
|
0.5 A
|
| Configuration |
COMPLEX
|
8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
| DC Current Gain-Min (hFE) |
1000
|
1000
|
| JESD-30 Code |
R-PDIP-T18
|
R-PDIP-T18
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
8
|
8
|
| Number of Terminals |
18
|
18
|
| Operating Temperature-Max |
150 °C
|
85 °C
|
| Operating Temperature-Min |
-20 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
2.25 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin (Sn)
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Element Material |
SILICON
|
SILICON
|
| VCEsat-Max |
1.6 V
|
1.6 V
|
| Base Number Matches |
1
|
2
|
| Pbfree Code |
|
No
|
| Additional Feature |
|
LOGIC LEVEL COMPATIBLE, BUILT-IN BIAS RESISTOR RATIO IS 0.28
|
| Collector-Emitter Voltage-Max |
|
50 V
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare ULN2801A with alternatives
Compare ULN2804AP with alternatives