UGB8ATHE3_A/I
vs
SRAS850RN
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
D2PAK-3/2
|
D2PAK-3/2
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
40 Weeks
|
|
| Date Of Intro |
2019-03-25
|
|
| Additional Feature |
FREE WHEELING DIODE
|
LOW POWER LOSS
|
| Application |
EFFICIENCY
|
EFFICIENCY
|
| Case Connection |
CATHODE
|
CATHODE
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.2 V
|
0.7 V
|
| JEDEC-95 Code |
TO-263AB
|
TO-263AB
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Pk Forward Current-Max |
150 A
|
150 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Output Current-Max |
8 A
|
8 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
245
|
|
| Reference Standard |
AEC-Q101
|
|
| Rep Pk Reverse Voltage-Max |
50 V
|
50 V
|
| Reverse Current-Max |
10 µA
|
100 µA
|
| Reverse Recovery Time-Max |
0.03 µs
|
|
| Reverse Test Voltage |
50 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Matte Tin (Sn)
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
1
|
2
|
| HTS Code |
|
8541.10.00.80
|
| Technology |
|
SCHOTTKY
|
|
|
|
Compare UGB8ATHE3_A/I with alternatives
Compare SRAS850RN with alternatives