UF800 vs FES8AT feature comparison

UF800 Galaxy Microelectronics

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FES8AT EIC Semiconductor Inc

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD EIC SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 0.95 V
Non-rep Pk Forward Current-Max 125 A 200 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 8 A 8 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Recovery Time-Max 0.05 µs 0.035 µs
Surface Mount NO NO
Base Number Matches 7 7
Pbfree Code Yes
HTS Code 8541.10.00.80
Application HIGH VOLTAGE ULTRA FAST RECOVERY
Case Connection CATHODE
Diode Element Material SILICON
JEDEC-95 Code TO-220AC
JESD-30 Code R-PSFM-T2
Number of Terminals 2
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Reverse Current-Max 10 µA
Reverse Test Voltage 50 V
Terminal Form THROUGH-HOLE
Terminal Position SINGLE

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