UF640L-AA3-R
vs
UF640L-TN3-T
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
UNISONIC TECHNOLOGIES CO LTD
UNISONIC TECHNOLOGIES CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
18 A
18 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
1
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
66 W
83 W
Surface Mount
YES
YES
Base Number Matches
1
1
Part Package Code
TO-252
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
4
Avalanche Energy Rating (Eas)
580 mJ
DS Breakdown Voltage-Min
200 V
Drain-source On Resistance-Max
0.18 Ω
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Pulsed Drain Current-Max (IDM)
72 A
Qualification Status
Not Qualified
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare UF640L-AA3-R with alternatives
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