UF640-TQ2-R
vs
LVP640
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
UNISONIC TECHNOLOGIES CO LTD
LITE-ON SEMICONDUCTOR CORP
Part Package Code
D2PAK
TO-220AB
Package Description
SMALL OUTLINE, R-PSSO-G2
TO-220, 3 PIN
Pin Count
4
3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
580 mJ
300 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
18 A
18 A
Drain-source On Resistance-Max
0.18 Ω
0.18 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-220AB
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
72 A
72 A
Surface Mount
YES
NO
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Operating Temperature-Max
150 °C
Qualification Status
Not Qualified
Compare UF640-TQ2-R with alternatives
Compare LVP640 with alternatives