UF2820P
vs
BLF245C
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
TE CONNECTIVITY LTD
|
NXP SEMICONDUCTORS
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
8541.29.00.75
|
| Case Connection |
SOURCE
|
ISOLATED
|
| Configuration |
SINGLE
|
COMMON SOURCE, 2 ELEMENTS
|
| DS Breakdown Voltage-Min |
65 V
|
65 V
|
| Drain Current-Max (ID) |
2.8 A
|
4.5 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
4.8 pF
|
8 pF
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
VERY HIGH FREQUENCY BAND
|
| JESD-30 Code |
S-CDFM-F4
|
R-CDFM-F8
|
| Number of Elements |
1
|
2
|
| Number of Terminals |
4
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
53 W
|
85 W
|
| Power Gain-Min (Gp) |
10 dB
|
16 dB
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
FLANGE MOUNT, R-CDFM-F8
|
| Drain-source On Resistance-Max |
|
1.5 Ω
|
|
|
|
Compare UF2820P with alternatives
Compare BLF245C with alternatives