UF1DLW vs NTE649D feature comparison

UF1DLW Taiwan Semiconductor

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NTE649D NTE Electronics Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD NTE ELECTRONICS INC
Package Description SOD-123W, 2 PIN R-PDSO-C2
Reach Compliance Code not_compliant unknown
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature FREE WHEELING DIODE
Application EFFICIENCY GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.95 V 1.3 V
JESD-30 Code R-PDSO-F2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Current-Max 1 µA 5 µA
Reverse Recovery Time-Max 0.02 µs 0.15 µs
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
ECCN Code EAR99
JEDEC-95 Code DO-214AC
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 1.19 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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