TZB82A
vs
P4KE75A-T3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SEMICON COMPONENTS INC
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
O-XALF-W2
O-PALF-W2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
90.2 V
78.8 V
Breakdown Voltage-Min
73.8 V
71.3 V
Breakdown Voltage-Nom
82 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
118 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-PALF-W2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
66 V
64.1 V
Reverse Current-Max
2 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
3
JEDEC-95 Code
DO-41
Moisture Sensitivity Level
1
Reference Standard
UL RECOGNIZED
Compare TZB82A with alternatives
Compare P4KE75A-T3 with alternatives