TZB18CB
vs
1N5644AE3TR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
SEMICON COMPONENTS INC
MICROSEMI CORP
Package Description
O-XALF-W2
O-MALF-W2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
18 V
31.5 V
Breakdown Voltage-Min
17.1 V
28.5 V
Breakdown Voltage-Nom
18 V
Case Connection
ISOLATED
CATHODE
Clamping Voltage-Max
25.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-MALF-W2
Non-rep Peak Rev Power Dis-Max
400 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
UNSPECIFIED
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Reverse Current-Max
2 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
JEDEC-95 Code
DO-202AA
Rep Pk Reverse Voltage-Max
25.6 V
Compare TZB18CB with alternatives
Compare 1N5644AE3TR with alternatives