TPK30KP33CA vs MSPPLAD30KP33CATR feature comparison

TPK30KP33CA Sangdest Microelectronics (Nanjing) Co Ltd

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MSPPLAD30KP33CATR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 40.6 V 40.6 V
Breakdown Voltage-Min 36.7 V 36.7 V
Breakdown Voltage-Nom 38.65 V
Case Connection CATHODE
Clamping Voltage-Max 53.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 S-PSSO-G1
Non-rep Peak Rev Power Dis-Max 30000 W 30000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Rep Pk Reverse Voltage-Max 33 V 33 V
Reverse Current-Max 200 µA
Reverse Test Voltage 33 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish PURE TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 1 1
Package Description PLASTIC PACKAGE-1
Pin Count 1
JESD-609 Code e0
Moisture Sensitivity Level 1
Qualification Status Not Qualified

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