TP0610T
vs
VP0610T
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TEMIC SEMICONDUCTORS
|
SIPEX CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW THRESHOLD
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
60 V
|
|
| Drain Current-Max (ID) |
0.12 A
|
0.12 A
|
| Drain-source On Resistance-Max |
10 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
5 pF
|
|
| JEDEC-95 Code |
TO-236
|
|
| JESD-30 Code |
R-PDSO-G3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
3
|
1
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Peak Reflow Temperature (Cel) |
|
240
|
| Power Dissipation-Max (Abs) |
|
0.36 W
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare TP0610T with alternatives
Compare VP0610T with alternatives