TP0606N3-G-P003 vs TP0606N3P005 feature comparison

TP0606N3-G-P003 Microchip Technology Inc

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TP0606N3P005 Supertex Inc

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Pbfree Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC SUPERTEX INC
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Factory Lead Time 7 Weeks
Samacsys Manufacturer Microchip
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.32 A 0.5 A
Drain-source On Resistance-Max 3.5 Ω 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 35 pF 35 pF
JEDEC-95 Code TO-92 TO-92
JESD-30 Code O-PBCY-T3 O-PBCY-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 1 W
Surface Mount NO NO
Terminal Finish MATTE TIN TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position BOTTOM BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code No
Additional Feature LOW THRESHOLD
Power Dissipation Ambient-Max 1 W
Qualification Status Not Qualified

Compare TP0606N3-G-P003 with alternatives

Compare TP0606N3P005 with alternatives