TP0606N3-G
vs
BST82
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
NXP SEMICONDUCTORS
Package Description
GREEN PACKAGE-3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.21.00.95
Factory Lead Time
5 Weeks, 4 Days
Samacsys Manufacturer
Microchip
NXP
Additional Feature
LOW THRESHOLD
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
80 V
Drain Current-Max (ID)
0.32 A
0.175 A
Drain-source On Resistance-Max
3.5 Ω
10 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
35 pF
6 pF
JEDEC-95 Code
TO-92
JESD-30 Code
O-PBCY-T3
R-PDSO-G3
JESD-609 Code
e3
e3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
CYLINDRICAL
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
1 W
0.3 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
MATTE TIN
Tin (Sn)
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
BOTTOM
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
7
Pbfree Code
Yes
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Compare TP0606N3-G with alternatives
Compare BST82 with alternatives