TP0606N3-G vs BST82 feature comparison

TP0606N3-G Microchip Technology Inc

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BST82 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC NXP SEMICONDUCTORS
Package Description GREEN PACKAGE-3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.21.00.95
Factory Lead Time 5 Weeks, 4 Days
Samacsys Manufacturer Microchip NXP
Additional Feature LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 80 V
Drain Current-Max (ID) 0.32 A 0.175 A
Drain-source On Resistance-Max 3.5 Ω 10 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 35 pF 6 pF
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3 R-PDSO-G3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style CYLINDRICAL SMALL OUTLINE
Polarity/Channel Type P-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 1 W 0.3 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position BOTTOM DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 7
Pbfree Code Yes
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

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