TN0106N3-GP013 vs 2N7002G-AE2-R feature comparison

TN0106N3-GP013 Microchip Technology Inc

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2N7002G-AE2-R Unisonic Technologies Co Ltd

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Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC UNISONIC TECHNOLOGIES CO LTD
Package Description CYLINDRICAL, O-PBCY-T3 HALOGEN FREE PACKAGE-3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.35 A 0.3 A
Drain-source On Resistance-Max 3 Ω 7.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 8 pF 5 pF
JEDEC-95 Code TO-92 TO-236
JESD-30 Code O-PBCY-T3 R-PDSO-G3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style CYLINDRICAL SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 1 W
Power Dissipation-Max (Abs) 1 W 0.2 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position BOTTOM DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Part Package Code SOT-23
Pin Count 3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare TN0106N3-GP013 with alternatives

Compare 2N7002G-AE2-R with alternatives