TK20J60W
vs
TK20E60W5
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
TOSHIBA CORP
|
TOSHIBA CORP
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
FLANGE MOUNT, R-PSFM-T3
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
20 Weeks
|
20 Weeks
|
Samacsys Manufacturer |
Toshiba
|
Toshiba
|
Avalanche Energy Rating (Eas) |
200 mJ
|
200 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
600 V
|
Drain Current-Max (ID) |
20 A
|
20 A
|
Drain-source On Resistance-Max |
0.155 Ω
|
0.175 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
165 W
|
|
Pulsed Drain Current-Max (IDM) |
80 A
|
80 A
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
JEDEC-95 Code |
|
TO-220AB
|
|
|
|
Compare TK20J60W with alternatives
Compare TK20E60W5 with alternatives