TK20E60U
vs
R6020ENJTL
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
End Of Life
Active
Ihs Manufacturer
TOSHIBA CORP
ROHM CO LTD
Package Description
FLANGE MOUNT, R-PSFM-T3
SC-83, 3/2 PIN
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Toshiba
ROHM Semiconductor
Avalanche Energy Rating (Eas)
144 mJ
418 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
20 A
20 A
Drain-source On Resistance-Max
0.19 Ω
0.196 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
190 W
Pulsed Drain Current-Max (IDM)
40 A
60 A
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Factory Lead Time
18 Weeks
JESD-609 Code
e2
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
Tin/Copper (Sn/Cu)
Time@Peak Reflow Temperature-Max (s)
10
Compare TK20E60U with alternatives
Compare R6020ENJTL with alternatives