TK11A65D vs STH10NC60FI feature comparison

TK11A65D Toshiba America Electronic Components

Buy Now Datasheet

STH10NC60FI STMicroelectronics

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TOSHIBA CORP STMICROELECTRONICS
Part Package Code TO-220AB TO-218
Package Description FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 506 mJ 820 mJ
Case Connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V 600 V
Drain Current-Max (ID) 11 A 10 A
Drain-source On Resistance-Max 0.7 Ω 0.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-218
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 45 W 60 W
Pulsed Drain Current-Max (IDM) 44 A 40 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

Compare TK11A65D with alternatives

Compare STH10NC60FI with alternatives