TGL41-8.2A
vs
USB6B1E3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INTERNATIONAL SEMICONDUCTOR INC
MICROSEMI CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
8.61 V
Breakdown Voltage-Min
7.79 V
6 V
Breakdown Voltage-Nom
8.2 V
Case Connection
ISOLATED
Clamping Voltage-Max
12.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PELF-N2
R-PDSO-G8
Non-rep Peak Rev Power Dis-Max
400 W
500 W
Number of Elements
1
1
Number of Terminals
2
8
Operating Temperature-Max
150 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
LONG FORM
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
7 V
5 V
Reverse Current-Max
200 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
NO LEAD
GULL WING
Terminal Position
END
DUAL
Base Number Matches
2
1
Package Description
R-PDSO-G8
Additional Feature
LOW CAPACITANCE
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Compare USB6B1E3 with alternatives