TGL41-47E3
vs
BZD27-C47,135
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
NXP SEMICONDUCTORS
|
| Package Description |
O-PELF-R2
|
O-LELF-R2
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
51.7 V
|
|
| Breakdown Voltage-Min |
42.3 V
|
44 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-213AB
|
|
| JESD-30 Code |
O-PELF-R2
|
O-LELF-R2
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
300 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-65 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
3 W
|
0.8 W
|
| Rep Pk Reverse Voltage-Max |
38.1 V
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Base Number Matches |
1
|
1
|
| Clamping Voltage-Max |
|
65.5 V
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Qualification Status |
|
Not Qualified
|
| Reverse Current-Max |
|
5 µA
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare TGL41-47E3 with alternatives
Compare BZD27-C47,135 with alternatives
-
BZD27-C47,135 vs BZD27-C470,135
-
BZD27-C47,135 vs 933867630135
-
BZD27-C47,135 vs BZD27-C47/T3
-
BZD27-C47,135 vs BZD27-C47,115
-
BZD27-C47,135 vs 934001270135
-
BZD27-C47,135 vs 933867630115
-
BZD27-C47,135 vs BZD27-C470T/R
-
BZD27-C47,135 vs BZD27C470
-
BZD27-C47,135 vs SA40E3