TGL41-30
vs
1.5SMC24A-E3/57T
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
EIC SEMICONDUCTOR CO LTD
VISHAY SEMICONDUCTORS
Package Description
MELF-2
R-PDSO-C2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
30 V
25.2 V
Breakdown Voltage-Min
27 V
22.8 V
Breakdown Voltage-Nom
28.5 V
24 V
Case Connection
ISOLATED
Clamping Voltage-Max
43.5 V
33.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-213AB
DO-214AB
JESD-30 Code
O-PELF-R2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
400 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
LONG FORM
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
6.5 W
Rep Pk Reverse Voltage-Max
24.3 V
20.5 V
Reverse Current-Max
5 µA
Reverse Test Voltage
24.3 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
WRAP AROUND
C BEND
Terminal Position
END
DUAL
Base Number Matches
8
2
Pbfree Code
Part Package Code
DO-214AB
Pin Count
2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
30
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