TGL34-68A
vs
MQ1N8171
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
EIC SEMICONDUCTOR CO LTD
MICROCHIP TECHNOLOGY INC
Package Description
SOD-80, MELF-2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
HIGH RELIABILITY
Breakdown Voltage-Max
71.4 V
Breakdown Voltage-Min
64.6 V
64.6 V
Breakdown Voltage-Nom
68 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
92 V
93.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JESD-30 Code
O-PELF-R2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
150 W
150 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-50 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Reference Standard
MIL-STD-750
IEC-61000-4-2,4-4,4-5
Rep Pk Reverse Voltage-Max
58.1 V
58 V
Reverse Current-Max
5 µA
0.5 µA
Reverse Test Voltage
58.1 V
Surface Mount
YES
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WRAP AROUND
WIRE
Terminal Position
END
AXIAL
Base Number Matches
2
2
Factory Lead Time
25 Weeks
Compare TGL34-68A with alternatives
Compare MQ1N8171 with alternatives