TGL34-18A vs MS1N8157 feature comparison

TGL34-18A EIC Semiconductor Inc

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MS1N8157 Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Active Transferred
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD MICROSEMI CORP
Package Description SOD-80, MELF-2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY HIGH RELIABILITY
Breakdown Voltage-Max 18.9 V
Breakdown Voltage-Min 17.1 V 17.1 V
Breakdown Voltage-Nom 18 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 25.2 V 25.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JESD-30 Code O-PELF-R2 O-LALF-W2
Non-rep Peak Rev Power Dis-Max 150 W 150 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -50 °C -55 °C
Package Body Material PLASTIC/EPOXY GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard MIL-STD-750 IEC-61000-4-2,4-4,4-5
Rep Pk Reverse Voltage-Max 15.3 V 15 V
Reverse Current-Max 5 µA 1 µA
Reverse Test Voltage 15.3 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Form WRAP AROUND WIRE
Terminal Position END AXIAL
Base Number Matches 3 2

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