TFMBJ8.0A-W vs P6SMB9.1A feature comparison

TFMBJ8.0A-W Rectron Semiconductor

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P6SMB9.1A MDE Semiconductor Inc

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer RECTRON LTD MDE SEMICONDUCTOR INC
Package Description R-PDSO-C2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 9.83 V 9.55 V
Breakdown Voltage-Min 8.89 V 8.65 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1 W
Rep Pk Reverse Voltage-Max 8 V 7.78 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 27
Breakdown Voltage-Nom 9.1 V
Clamping Voltage-Max 13.4 V
Reference Standard UL CERTIFIED
Reverse Current-Max 50 µA
Reverse Test Voltage 7.78 V

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