TFMBJ6.0A-T vs P6SMB6.8A-M3/52 feature comparison

TFMBJ6.0A-T Rectron Semiconductor

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P6SMB6.8A-M3/52 Vishay Semiconductors

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer RECTRON LTD VISHAY SEMICONDUCTORS
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 7.37 V 7.14 V
Breakdown Voltage-Min 6.67 V 6.45 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Rep Pk Reverse Voltage-Max 6 V 5.8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40 30
Base Number Matches 1 2
Samacsys Manufacturer Vishay
Breakdown Voltage-Nom 6.8 V
Clamping Voltage-Max 10.5 V
Forward Voltage-Max (VF) 3.5 V
Moisture Sensitivity Level 1
Reverse Current-Max 1000 µA
Reverse Test Voltage 5.8 V

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Compare P6SMB6.8A-M3/52 with alternatives