TESDU12VRZ
vs
TESDU12V
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Package Description
R-PBCC-N2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
13 V
14 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PBCC-N2
R-PDSO-R2
JESD-609 Code
e4
e4
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
25 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
85 °C
Operating Temperature-Min
-55 °C
-40 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
SMALL OUTLINE
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
12 V
12 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
GOLD
Gold (Au)
Terminal Form
NO LEAD
WRAP AROUND
Terminal Position
BOTTOM
DUAL
Base Number Matches
1
1
Samacsys Manufacturer
Taiwan Semiconductor
Breakdown Voltage-Nom
17 V
Clamping Voltage-Max
40 V
Power Dissipation-Max
0.1 W
Reference Standard
IEC-61000-4-2
Reverse Current-Max
1 µA
Reverse Test Voltage
12 V
Compare TESDU12VRZ with alternatives
Compare TESDU12V with alternatives