TESDU12V
vs
TESDU12VRZG
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Samacsys Manufacturer
Taiwan Semiconductor
Breakdown Voltage-Min
14 V
13 V
Breakdown Voltage-Nom
17 V
Clamping Voltage-Max
40 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-R2
R-PBCC-N2
JESD-609 Code
e4
e4
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
85 °C
150 °C
Operating Temperature-Min
-40 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
CHIP CARRIER
Polarity
UNIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
0.1 W
Reference Standard
IEC-61000-4-2
Rep Pk Reverse Voltage-Max
12 V
12 V
Reverse Current-Max
1 µA
Reverse Test Voltage
12 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Gold (Au)
GOLD
Terminal Form
WRAP AROUND
NO LEAD
Terminal Position
DUAL
BOTTOM
Base Number Matches
1
1
Package Description
R-PBCC-N2
Non-rep Peak Rev Power Dis-Max
25 W
Qualification Status
Not Qualified
Compare TESDU12V with alternatives
Compare TESDU12VRZG with alternatives