TDTC123J
vs
DTC123JL-AE3-R
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TOSHIBA CORP
UNISONIC TECHNOLOGIES CO LTD
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Toshiba
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 21
BUILT-IN BIAS RESISTOR
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
80
80
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
NPN
NPN
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
250 MHz
250 MHz
Base Number Matches
1
1
Pin Count
3
Power Dissipation-Max (Abs)
0.2 W
Compare TDTC123J with alternatives
Compare DTC123JL-AE3-R with alternatives