TC58NYM9S3ETA00
vs
NAND512R3A1DN1F
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
TOSHIBA CORP
|
STMICROELECTRONICS
|
| Part Package Code |
TSOP1
|
TSOP
|
| Package Description |
TSOP1,
|
12 X 20 MM, TSOP-48
|
| Pin Count |
48
|
48
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| JESD-30 Code |
R-PDSO-G48
|
R-PDSO-G48
|
| Length |
18.4 mm
|
18.4 mm
|
| Memory Density |
536870912 bit
|
536870912 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
48
|
48
|
| Number of Words |
67108864 words
|
67108864 words
|
| Number of Words Code |
64000000
|
64000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
70 °C
|
| Operating Temperature-Min |
-40 °C
|
|
| Organization |
64MX8
|
64MX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TSOP1
|
TSOP1
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE, THIN PROFILE
|
SMALL OUTLINE, THIN PROFILE
|
| Parallel/Serial |
SERIAL
|
PARALLEL
|
| Programming Voltage |
1.8 V
|
1.8 V
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Supply Voltage-Max (Vsup) |
1.95 V
|
1.95 V
|
| Supply Voltage-Min (Vsup) |
1.7 V
|
1.65 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
COMMERCIAL
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Pitch |
0.5 mm
|
0.5 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
12 mm
|
12 mm
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Access Time-Max |
|
15000 ns
|
| JESD-609 Code |
|
e3
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN
|
| Type |
|
SLC NAND TYPE
|
|
|
|
Compare TC58NYM9S3ETA00 with alternatives
Compare NAND512R3A1DN1F with alternatives