TC55VEM416AXBN55
vs
K6F1616U6M-EF55
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TOSHIBA CORP
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
BGA
Package Description
8 X 11 MM, 0.75 MM PITCH, PLASTIC, TFBGA-48
VFBGA,
Pin Count
48
48
Reach Compliance Code
unknown
unknown
ECCN Code
3A991.B.2.A
3A991.B.2.A
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
55 ns
55 ns
I/O Type
COMMON
JESD-30 Code
R-PBGA-B48
R-PBGA-B48
Length
11 mm
12 mm
Memory Density
16777216 bit
16777216 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
16
16
Number of Functions
1
1
Number of Terminals
48
48
Number of Words
1048576 words
1048576 words
Number of Words Code
1000000
1000000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
85 °C
85 °C
Operating Temperature-Min
-40 °C
-40 °C
Organization
1MX16
1MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
VFBGA
Package Equivalence Code
BGA48,6X8,30
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial
PARALLEL
PARALLEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
1.2 mm
1 mm
Standby Voltage-Min
1.5 V
Supply Current-Max
0.035 mA
Supply Voltage-Max (Vsup)
3.6 V
3.3 V
Supply Voltage-Min (Vsup)
2.3 V
2.7 V
Supply Voltage-Nom (Vsup)
3 V
3 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
INDUSTRIAL
Terminal Form
BALL
BALL
Terminal Pitch
0.75 mm
0.75 mm
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
8 mm
9 mm
Base Number Matches
1
2
Compare TC55VEM416AXBN55 with alternatives
Compare K6F1616U6M-EF55 with alternatives