TA6F18AHM3/6B
vs
TA6F18AHM3_A/I
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
VISHAY SEMICONDUCTORS
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
R-PDSO-F2
|
SMA, 2 PIN
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
|
HIGH RELIABILITY, EXCELLENT CLAMPING CAPABILITY
|
| Breakdown Voltage-Max |
18.9 V
|
18.9 V
|
| Breakdown Voltage-Min |
17.1 V
|
17.1 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-221AC
|
DO-221AC
|
| JESD-30 Code |
R-PDSO-F2
|
R-PDSO-F2
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
600 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
185 °C
|
185 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1.1 W
|
1.1 W
|
| Reference Standard |
AEC-Q101
|
AEC-Q101; IEC-61000-4-2
|
| Rep Pk Reverse Voltage-Max |
15.3 V
|
15.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Factory Lead Time |
|
8 Weeks
|
| Date Of Intro |
|
2016-09-25
|
| Samacsys Manufacturer |
|
Vishay
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare TA6F18AHM3/6B with alternatives
Compare TA6F18AHM3_A/I with alternatives