SUP90N08-8M2P-E3 vs IRF511-009 feature comparison

SUP90N08-8M2P-E3 Vishay Intertechnologies

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IRF511-009 Infineon Technologies AG

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC INFINEON TECHNOLOGIES AG
Package Description ROHS COMPLIANT PACKAGE-3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 125 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 75 V 80 V
Drain Current-Max (ID) 90 A 5.6 A
Drain-source On Resistance-Max 0.014 Ω 0.54 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 200 A 20 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Case Connection DRAIN

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