SUP60N06-18
vs
FQPF13N50C
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SILICONIX INC
ROCHESTER ELECTRONICS LLC
Part Package Code
TO-220AB
TO-220AB
Package Description
,
TO-220F, 3 PIN
Pin Count
3
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
60 A
13 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
e3
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
120 W
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
MATTE TIN
Base Number Matches
1
1
Pbfree Code
Avalanche Energy Rating (Eas)
860 mJ
Case Connection
ISOLATED
DS Breakdown Voltage-Min
500 V
Drain-source On Resistance-Max
0.48 Ω
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Moisture Sensitivity Level
NOT APPLICABLE
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Pulsed Drain Current-Max (IDM)
52 A
Qualification Status
COMMERCIAL
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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Compare FQPF13N50C with alternatives