SUD50P04-13L-E3
vs
AP6679GJ
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
VISHAY SILICONIX
ADVANCED POWER ELECTRONICS CORP
Part Package Code
TO-252
TO-251
Package Description
SMALL OUTLINE, R-PSSO-G2
ROHS COMPLIANT PACKAGE-3
Pin Count
4
3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
80 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
30 V
Drain Current-Max (ID)
50 A
75 A
Drain-source On Resistance-Max
0.013 Ω
0.009 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
TO-251
JESD-30 Code
R-PSSO-G2
R-PSIP-T3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
IN-LINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
93.7 W
Pulsed Drain Current-Max (IDM)
100 A
300 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Compare SUD50P04-13L-E3 with alternatives
Compare AP6679GJ with alternatives