SUD50N02-06
vs
NTD85N02RT4
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
VISHAY SILICONIX
|
ROCHESTER ELECTRONICS LLC
|
Part Package Code |
TO-252AA
|
|
Package Description |
TO-252, 3 PIN
|
CASE 369AA, DPAK-3
|
Pin Count |
4
|
3
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Number of Elements |
1
|
1
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
100 W
|
|
Base Number Matches |
2
|
2
|
Pbfree Code |
|
No
|
Manufacturer Package Code |
|
CASE 369AA
|
Avalanche Energy Rating (Eas) |
|
85 mJ
|
Case Connection |
|
DRAIN
|
DS Breakdown Voltage-Min |
|
24 V
|
Drain Current-Max (ID) |
|
85 A
|
Drain-source On Resistance-Max |
|
0.0052 Ω
|
JESD-30 Code |
|
R-PSSO-G2
|
JESD-609 Code |
|
e0
|
Number of Terminals |
|
2
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
|
240
|
Pulsed Drain Current-Max (IDM) |
|
192 A
|
Qualification Status |
|
COMMERCIAL
|
Surface Mount |
|
YES
|
Terminal Finish |
|
TIN LEAD
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
Compare SUD50N02-06 with alternatives
Compare NTD85N02RT4 with alternatives