SUB75N03-07 vs RFD16N05SM feature comparison

SUB75N03-07 Vishay Intertechnologies

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RFD16N05SM Harris Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC HARRIS SEMICONDUCTOR
Package Description ,
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 75 A 16 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 120 W 72 W
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Base Number Matches 2 5
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Case Connection DRAIN
DS Breakdown Voltage-Min 50 V
Drain-source On Resistance-Max 0.047 Ω
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation Ambient-Max 72 W
Pulsed Drain Current-Max (IDM) 45 A
Qualification Status Not Qualified
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 125 ns
Turn-on Time-Max (ton) 65 ns

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