STP7NB60 vs MTP6N60E feature comparison

STP7NB60 STMicroelectronics

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MTP6N60E onsemi

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS ON SEMICONDUCTOR
Part Package Code TO-220AB TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 580 mJ 405 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 7.2 A 6 A
Drain-source On Resistance-Max 1.2 Ω 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 21 pF
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W 125 W
Pulsed Drain Current-Max (IDM) 28.8 A 18 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-on Time-Max (ton) 39 ns
Base Number Matches 1 5
Manufacturer Package Code CASE 221A-09
Case Connection DRAIN
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 235
Time@Peak Reflow Temperature-Max (s) 30

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Compare MTP6N60E with alternatives